Temperature Analysis and Characteristics of Highly Strained InGaAs – GaAsP – GaAs ( > 1 . 17 m ) Quantum - Well Lasers

Characteristic temperature coefficients of the threshold current ( 0) and the external differential quantum efficiency ( 1) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold ( th) and transparency ( tr) current density, the carrier injection efficiency ( inj) and external ( ) differential quantum efficiency, the internal loss ( ), and the material gain parameter ( ). The temperature analysis is performed on low-threshold current density ( = 1.17–1.19 m) InGaAs–GaAsP–GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for 0 and 1 are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.